GC3D20065A - Silicon Carbide Schottky Diode

Key Features

VRRM = 650 V.
650-Volt Schottky Rectifier IF (TC=135˚C) = 26 A.
Zero Reverse Recovery Current.
Zero Forward Recovery Voltage Qc = 48 nC.
High-Frequency Operation.
Temperature-Independent Switching Behavior.
Extremely Fast Switching.
Positive Temperature Coefficient on VF m Benefits o.
Replace Bipolar with Unipolar Rectifiers c.
Essentially No Switching Losses.
Higher Efficie.

GC3D20065A silicon carbide schottky diode by Gwok - Datasheet Preview

Datasheet Details

Part number	GC3D20065A
Manufacturer	Gwok
File Size	1.54 MB
Description	Silicon Carbide Schottky Diode
Datasheet	GC3D20065A Datasheet

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Full PDF Text Transcription (Reference)

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GC3D20065A Silicon Carbide Schottky Diode Features VRRM = 650 V • 650-Volt Schottky Rectifier IF (TC=135˚C) = 26 A** • Zero Reverse Recovery Current • Zero Forward Recovery Voltage Qc = 48 nC** • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF m Benefits o • Replace Bipolar with Unipolar Rectifiers c • Essentially No Switching Losses • Higher Efficiency .