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MURTA20060R - Silicon Super Fast Recovery Diode

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GeneSiC

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MURTA20060R Silicon Super Fast Recovery Diode by GeneSiC - Datasheet Preview — Datasheet preview – MURTA20060R

Datasheet Details

Part number	MURTA20060R
Manufacturer	GeneSiC
File Size	461.37 KB
Description	Silicon Super Fast Recovery Diode
Datasheet	MURTA20060R Datasheet
Note	This datasheet PDF includes multiple part numbers: MURTA20060R, MURTA20060. Please refer to the document for exact specifications by model.
Additional preview pages of the MURTA20060R datasheet.

Product details

Features

High Surge Capability.
Types from 600 V to 1200 V VRRM.
Isolation Type Package.
Electrically Isolated Base Plate.
Not ESD Sensitive MURTA20060 thru MURTA200120R VRRM = 600 V - 1200 V IF(AV) = 200 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA20060(R) MURTA200120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

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Other Datasheets by GeneSiC

MURTA20060 - Silicon Super Fast Recovery Diode
MURTA200120 - Silicon Super Fast Recovery Diode
MURTA200120R - Silicon Super Fast Recovery Diode
MURTA300120 - Silicon Super Fast Recovery Diode
MURTA300120R - Silicon Super Fast Recovery Diode
MURTA30060 - Silicon Super Fast Recovery Diode

Published: Feb 14, 2019 |