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MURTA20060 - Silicon Super Fast Recovery Diode

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GeneSiC

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MURTA20060 Silicon Super Fast Recovery Diode by GeneSiC - Datasheet Preview — Datasheet preview – MURTA20060

Datasheet Details

Part number	MURTA20060
Manufacturer	GeneSiC
File Size	461.37 KB
Description	Silicon Super Fast Recovery Diode
Datasheet	MURTA20060 Datasheet
Additional preview pages of the MURTA20060 datasheet.

Product details

Features

High Surge Capability.
Types from 600 V to 1200 V VRRM.
Isolation Type Package.
Electrically Isolated Base Plate.
Not ESD Sensitive MURTA20060 thru MURTA200120R VRRM = 600 V - 1200 V IF(AV) = 200 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA20060(R) MURTA200120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

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Other Datasheets by GeneSiC

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MURTA200120R - Silicon Super Fast Recovery Diode
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MURTA30060 - Silicon Super Fast Recovery Diode

Published: Feb 14, 2019 |