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GAP3SHT33-CAL Datasheet Silicon Carbide Power Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GAP3SHT33-CAL
Manufacturer GeneSiC
File Size 214.79 KB
Description Silicon Carbide Power Schottky Diode
Download GAP3SHT33-CAL Download (PDF)

Overview

Silicon Carbide Power Schottky Diode.

Key Features

  • 3300 V Schottky rectifier.
  • 210 °C maximum operating temperature.
  • Positive temperature coefficient of VF.
  • Fast switching speeds.
  • Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages.
  • Improved circuit efficiency (Lower overall cost).
  • Significantly reduced switching losses compare to Si PiN diodes.
  • Ease of paralleling devices without thermal runaway.
  • Sm.

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