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GAP05SLT80-CAL Datasheet Silicon Carbide Power Schottky Diode

Manufacturer: GeneSiC

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GAP05SLT80-CAL silicon carbide power schottky diode by GeneSiC - Datasheet Preview

Datasheet Details

Part number	GAP05SLT80-CAL
Manufacturer	GeneSiC
File Size	333.63 KB
Description	Silicon Carbide Power Schottky Diode
Datasheet	GAP05SLT80-CAL Datasheet

Overview

Silicon Carbide Power Schottky Diode.

Key Features

8000 V Silicon Carbide Schottky rectifier.
175 °C maximum operating temperature.
Positive temperature coefficient of VF.
Extremely fast switching speeds.
Superior figure of merit QC/IF Advantages.
Improved circuit efficiency (Lower overall cost).
Low switching losses.
Ease of paralleling devices without thermal runaway.
Smaller heat sink requirements.
Low reverse recovery current.
Low device capacitance.
Low reverse leakage current at.

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