G35P04 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G35P04 datasheet PDF. This datasheet also includes the G35P04D5 variant, as both parts are published together in a single manufacturer document.

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G35P04 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G35P04D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G35P04
Manufacturer	GOFORD
File Size	847.15 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G35P04 Datasheet

General Description

The G35P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G35P04D5 P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -40V -35A < 14mΩ < 20mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number	Description
G35P04D5	P-Channel Enhancement Mode Power MOSFET
G35N02	N-Channel Enhancement Mode Power MOSFET
G35N02K	N-Channel Enhancement Mode Power MOSFET