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G35N02 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G35N02 datasheet PDF. This datasheet also includes the G35N02K variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (G35N02K-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G35N02
Manufacturer GOFORD
File Size 646.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G35N02 Datasheet

General Description

The G35N02K uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G35N02K N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant 20V 35A < 13mΩ < 18mΩ.

More Datasheets from GOFORD

Part Number Description
G35N02K N-Channel Enhancement Mode Power MOSFET
G35P04 P-Channel Enhancement Mode Power MOSFET
G35P04D5 P-Channel Enhancement Mode Power MOSFET