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G2003A Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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G2003A n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	G2003A
Manufacturer	GOFORD
File Size	1.23 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	G2003A Datasheet

General Description

The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD G2003A.

Key Features

VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.
RoHS Compliant Schematic Diagram Marking and Pin Assignment.

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