G2002A Datasheet Text
G2002A
N-Channel Enhancement Mode Power MOSFET
Description
The G2002A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
200V 2A < 540mΩ < 560mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
SOT-23-6L
Ordering Information
Device G2002A
Package SOT-23-6L
Marking...
