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G1NP02ELL Datasheet N and P Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G1NP02ELL
Manufacturer GOFORD
File Size 554.33 KB
Description N and P Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G1NP02ELL Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

G1NP02ELL General

Overview

GOFORD N and P Channel Enhancement Mode Power MOSFET.

Key Features

  • NMOS.
  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • RDS(ON) (at VGS = 2.5V).
  • RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
  • PMOS.
  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • RDS(ON) (at VGS = -2.5V).
  • RDS(ON) (at VGS = -1.8V).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

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G1NP02 N and P Channel Enhancement Mode Power MOSFET