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G1NP02 - N and P Channel Enhancement Mode Power MOSFET

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G1NP02 N and P Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G1NP02

Datasheet Details

Part number	G1NP02
Manufacturer	GOFORD
File Size	554.33 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G1NP02 Datasheet
Note	This datasheet PDF includes multiple part numbers: G1NP02, G1NP02ELL. Please refer to the document for exact specifications by model.
Additional preview pages of the G1NP02 datasheet.

Product details

Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

Features

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RDS(ON) (at VGS = -2.5V).
RDS(ON) (at VGS = -1.8V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

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Other Datasheets by GOFORD

G1NP02ELL - N and P Channel Enhancement Mode Power MOSFET

Published: Nov 3, 2024 |