G1NP02 Datasheet N And P Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Overview: GOFORD N and P Channel Enhancement Mode Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	G1NP02
Manufacturer	GOFORD
File Size	554.33 KB
Description	N and P Channel Enhancement Mode Power MOSFET
Datasheet	G1NP02 G1NP02ELL Datasheet (PDF)

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

G1NP02ELL General

Key Features

NMOS.
VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
RDS(ON) (at VGS = 2.5V).
RDS(ON) (at VGS = 1.8V) 20V 1.36A < 375mΩ < 450mΩ < 800mΩ.
PMOS.
VDS.
ID (at VGS = -10V).
RDS(ON) (at VGS = -4.5V).
RDS(ON) (at VGS = -2.5V).
RDS(ON) (at VGS = -1.8V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>2.0KV -20V -1.15A < 520mΩ < 700mΩ < 1000mΩ Schematic diagram Marking and pin assignment.

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More Datasheets from GOFORD

Part Number	Description
G1NP02ELL	N and P Channel Enhancement Mode Power MOSFET