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G10N03S Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G10N03S
Manufacturer GOFORD
File Size 683.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Download G10N03S Download (PDF)

General Description

The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G10N03S N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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