G10N03 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G10N03 datasheet PDF. This datasheet also includes the G10N03S variant, as both parts are published together in a single manufacturer document.

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G10N03 n-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G10N03S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G10N03
Manufacturer	GOFORD
File Size	683.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Download	G10N03 Download (PDF)

General Description

The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G10N03S N-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 13A < 9mΩ < 16mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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