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G09N06S2 Datasheet N-Channel Trench MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number	G09N06S2
Manufacturer	GOFORD
File Size	555.03 KB
Description	N-Channel Trench MOSFET
Download	G09N06S2 Download (PDF)

General Description

The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD N-Channel Trench MOSFET.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
RDS(ON) (at VGS = 4.5V) < 20mΩ.
100% Avalanche Tested.
RoHS Compliant.

More Datasheets from GOFORD

Part Number	Description
G09N06	N-Channel Trench MOSFET