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G09N06 Datasheet N-Channel Trench MOSFET

Manufacturer: GOFORD

Download the G09N06 datasheet PDF. This datasheet also includes the G09N06S2 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G09N06S2-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G09N06
Manufacturer GOFORD
File Size 555.03 KB
Description N-Channel Trench MOSFET
Download G09N06 Download (PDF)

General Description

The G09N06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD N-Channel Trench MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) 60V 9A < 18mΩ.
  • RDS(ON) (at VGS = 4.5V) < 20mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant.

More Datasheets from GOFORD

Part Number Description
G09N06S2 N-Channel Trench MOSFET