G05P06 Datasheet Text
G05P06L
P-Channel Enhancement Mode Power MOSFET
Description
The G05P06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS pliant
-60V -5A < 80mΩ < 90mΩ
Schematic diagram
Application l Power switch l DC/DC converters
SOT-23-3L
Ordering Information
Device G05P06L
Package SOT-23-3L
Marking...