G01N20LE Datasheet Text
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- VDS
- ID (at VGS = 10V)
- RDS(ON) (at VGS = 10V)
- RDS(ON) (at VGS = 4.5V)
- 100% Avalanche Tested
- RoHS pliant
- ESD (HBM)>5.0KV
200V 1.7A < 0.85Ω
< 0.9Ω
Schematic diagram G01N20
Marking and pin assignment
Application
- Power switch
- DC/DC converters
Device G01N20LE
Package SOT-23-3L
Marking G01N20
SOT-23-3L Packaging...