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G01N20LE Datasheet N-Channel MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G01N20LE
Manufacturer GOFORD
File Size 550.07 KB
Description N-Channel MOSFET
Datasheet download datasheet G01N20LE Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V).
  • RDS(ON) (at VGS = 4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD (HBM)>5.0KV 200V 1.7A < 0.85Ω < 0.9Ω Schematic diagram G01N20 Marking and pin assignment.

More Datasheets from GOFORD

Part Number Description
G01N20 N-Channel MOSFET