G01N20 Datasheet N-Channel MOSFET

Manufacturer: GOFORD

Download the G01N20 datasheet PDF. This datasheet also includes the G01N20LE variant, as both parts are published together in a single manufacturer document.

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G01N20 n-channel mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G01N20LE-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G01N20
Manufacturer	GOFORD
File Size	550.07 KB
Description	N-Channel MOSFET
Datasheet	G01N20 Datasheet

General Description

This Product uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

General

Overview

GOFORD G01N20LE N-Channel Enhancement Mode Power MOSFET.

Key Features

VDS.
ID (at VGS = 10V).
RDS(ON) (at VGS = 10V).
RDS(ON) (at VGS = 4.5V).
100% Avalanche Tested.
RoHS Compliant.
ESD (HBM)>5.0KV 200V 1.7A < 0.85Ω < 0.9Ω Schematic diagram G01N20 Marking and pin assignment.

More Datasheets from GOFORD

Part Number	Description
G01N20LE	N-Channel MOSFET