BSS84DW - P-Channel Enhancement Mode MOSFET

Galaxy Microelectronics

Key Features

Low on-resistance.
High-speed switching.
Drive circui ts can be simple.
Parallel use is easy Typical.

BSS84DW p-channel enhancement mode mosfet by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	BSS84DW
Manufacturer	Galaxy Microelectronics
File Size	462.71 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	BSS84DW Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BSS84DW	DUAL P-CHANNEL ENHANCEMENT MODE MOSFET	Diodes Incorporated
BSS84DW	P-CHANNEL MOSFET	H&M Semiconductor
BSS84DW	Dual P-Channel MOSFET	Kexin
BSS84DW	P-Channel Enhancement Mode MOSFET	Bruckewell
BSS84DW	P-CHANNEL POWER MOSFET	AiT Semiconductor

Other Datasheets by Galaxy Microelectronics

Part Number	Description
BSS84	P-Channel Vertical D-MOS Transistor
BSS8402DW	MOSFET
BSS84W	P-Channel Power Mosfet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

P-Channel Enhancement Mode MOSFET BSS84DW Features  Low on-resistance  High-speed switching  Drive circui ts can be simple  Parallel use is easy Typical Applications  P-channel enhancement mode effect transistor  Switching application Mechanical Data  Case: SOT-363  Molding Compound, UL Flammability Classification Rating 94V-0  Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208 BSS84DW SOT-363 Ordering Information Part Number BSS84DW Package SOT-363 Shipping 3000pcs / Tape & Reel Marking Code K84 Maximum Ratings (@TA=25℃ unless otherwise specified) Parameter Symbol Drain-Source Voltage VDSS Gate -Source Voltage VGSS Continuous Drain Current (NOTE1) ID Power Dissipation (NOTE1) PD Value -50 ±12 -130 0.