BL10N30 - N-Channel Power Mosfet

Galaxy Microelectronics

Key Features

High switching speed.
RDS(ON)=0.65Ω @ VGS=10V.
100% avalanche tested.
Very Good Manufacturing Reliabilty. Pb Lead-free.

BL10N30 n-channel power mosfet by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	BL10N30
Manufacturer	Galaxy Microelectronics
File Size	205.83 KB
Description	N-Channel Power Mosfet
Datasheet	BL10N30 Datasheet

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Production specification N-Channel Power MOSFET BL10N30 FEATURES  High switching speed.  RDS(ON)=0.65Ω @ VGS=10V.  100% avalanche tested.  Very Good Manufacturing Reliabilty. Pb Lead-free APPLICATIONS  N-Channel Power MOSFET.  Switching Applications.