MB8264-15 - NMOS Dynamic Random Access Memory

Product Overview

Fujitsu

Part number	MB8264-15
Manufacturer	Fujitsu
File Size	198.20 KB
Description	NMOS Dynamic Random Access Memory
Datasheet	MB8264-15 Datasheet
Additional preview pages of the MB8264-15 datasheet.

The Fujitsu MB8264 is a fully decoded, dynamic NMOS random access memory organized as 65536 one-bit words.

.65,536 x 1 RAM,16-pln package.
Sillcon-gate, Double Poly NMOS, single transistor cell.
Row access time: 150ns Max (MB8264-15) 200ns Max (MB8264-20).
Cycle time: 270ns Min (MB8264-15) 330ns Min (MB8264-20).
Low power: 22 mW Max Standby 275 mW Max Active (MB8264-15) 248 mW Max Active (MB8264-20).
:!:10% tolerance on +5V Supply.
On-chlp substrate bias generator.
All Inputs TTL compatible, low capacitive load.
Three-state TTL.

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Published: Nov 16, 2025 |