Full PDF Text Transcription for K3262-01MR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3262-01MR. For precise diagrams, and layout, please refer to the original PDF.
2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET FUJI POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof TO...
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-resistance No secondary breadown Low driving power Avalanche-proof TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Ta=25°C Tc=25°C Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD PD Tch Tstg Rating 200 ±20 ±80 ±20 355 2 45 +150 -55 to +150 Unit V A A V mJ W W °C °C *1 L=1.
K3262-01MR Datasheet
