Full PDF Text Transcription for K3216-01 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3216-01. For precise diagrams, and layout, please refer to the original PDF.
2SK3216-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-2...
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ary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 100 ±50 ±200 ±30 464 1.
K3216-01 Datasheet
