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FGW50XS65C - Discrete IGBT

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGW50XS65C http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed XS-series) 650V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbol VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation Ptot_IGBT FWD Max.