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FGW50N65WE - Discrete IGBT

General Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 50mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 50

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGW50N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbols VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation PD_IGBT FWD Max.