FGW40N65WE - Discrete IGBT

Product Overview

Fuji Electric

Datasheet Details

Part number	FGW40N65WE
Manufacturer	Fuji Electric
File Size	625.92 KB
Description	Discrete IGBT
Datasheet	FGW40N65WE Datasheet
Additional preview pages of the FGW40N65WE datasheet.

Product details

Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 40mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 40A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 40A Turn-On Delay Time Rise Ti

Features

Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Published: Apr 9, 2025 |