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FGW40N120WE - Discrete IGBT

General Description

Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Other Datasheets by Fuji Electric

Part Number Description
FGW40N120W Discrete IGBT
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FGW40N65WE Discrete IGBT
FGW40XS120 Discrete IGBT
FGW40XS120C Discrete IGBT
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FGW40XS65C Discrete IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FGW40N120WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 1200V / 40A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage DC Collector Current Pulsed Collector Current Turn-Off Safe Operating Area Diode Forward Current Diode Pulsed Current Symbol VCES VGES IC@25 IC@100 ICP IF@25 IF@100 IFP Short Circuit Withstand Time tSC IGBT Max. Power Dissipation PD_IGBT FWD Max.