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2SK3983-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3983-01S datasheet PDF. This datasheet also covers the 2SK3983-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3983-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fuji Electric

Part Number Description
2SK3983-01SJ N-CHANNEL SILICON POWER MOSFET
2SK3983-01L N-CHANNEL SILICON POWER MOSFET
2SK3981-01 N-CHANNEL SILICON POWER MOSFET
2SK3982-01MR N-CHANNEL SILICON POWER MOSFET
2SK3987-01L N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

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2SK3983-01L,S,SJ FUJIPOWERMOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Symbol VDS VDSX Ratings 900 900 Unit V V Remarks VGS=-30V Continuous drain current ID ±2.6 A Pulsed drain current ID(puls] ±10.4 A Gate-source voltage VGS Repetitive or non-repetitive IAR ±30 2.6 V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Max.
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