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2SK3981-01 FUJI POWER MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power High voltage
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
TO-220AB
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings Unit Remarks
Drain-source voltage
VDS
900
V
VDSX
900
V VGS=-30V
Continuous drain current
ID
2.6
A
Pulsed drain current
ID(puls]
±10.4
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
2.6
A Note *1
Non-repetitive
Maximum avalanche energy
EAS
349.
2SK3981-01 Datasheet
