A2I20H060GNR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the A2I20H060GNR1 datasheet PDF. This datasheet also includes the A2I20H060NR1 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

A2I20H060GNR1 rf ldmos wideband integrated power amplifiers by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (A2I20H060NR1-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	A2I20H060GNR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	951.42 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Download	A2I20H060GNR1 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: A2I20H060N Rev.

0, 2/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 1800 to 2200 MHz.

This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

Key Features

Advanced High Performance In--Package Doherty.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2).
Designed for Digital Predistortion Error Correction Systems A2I20H060NR1 A2I20H060GNR1 1800.
2200 MHz, 12 W AVG. , 28 V.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
A2I20H060NR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I20D020GNR1	RF LDMOS Wideband Integrated Power Amplifiers
A2I20D020NR1	RF LDMOS Wideband Integrated Power Amplifiers