A2I20D020NR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

A2I20D020NR1 rf ldmos wideband integrated power amplifiers by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	A2I20D020NR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	432.51 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Download	A2I20D020NR1 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: A2I20D020N Rev.

0, 5/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I20D020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1400 to 2200 MHz.

This multi--stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

Key Features

Extremely Wide RF Bandwidth.
RF Decoupled Drain Pins Reduce Overall Board Space.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) A2I20D020NR1 A2I20D020GNR1 1400.
2200 MHz, 2.5 W AVG. , 28 V.

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