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NDS8934 - Dual P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • -3.8A, -20V. RDS(ON) = 0.07Ω @ VGS = -4.5V RDS(ON) = 0.1Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. _________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDS89.

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Other Datasheets by Fairchild (onsemi)

Part Number Description
NDS8936 Dual N-Channel MOSFET
NDS8926 Dual N-Channel MOSFET
NDS8928 Dual N&P-Channel MOSFET
NDS8947 Dual P-Channel MOSFET
NDS8958 Dual N&P-Channel MOSFET

Full PDF Text Transcription

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March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -3.8A, -20V. RDS(ON) = 0.07Ω @ VGS = -4.5V RDS(ON) = 0.1Ω @ VGS = -2.7V.
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