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NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
-6.5A, -20V. RDS(ON) = 0.035Ω @ VGS = -4.5V RDS(ON) = 0.05Ω @ VGS = -2.7V.
High density cell design for extremely low RDS(ON).
NDS8434 Datasheet
