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NDS8433 - single P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • -5.2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS.

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Datasheet Details

Part number NDS8433
Manufacturer Fairchild
File Size 332.06 KB
Description single P-Channel MOSFET
Datasheet download datasheet NDS8433 Datasheet
Additional preview pages of the NDS8433 datasheet.

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Full PDF Text Transcription

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June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON).
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