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SSF45N20B - 200V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 26.4A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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  • G! G D S TO-3PF SSF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°.

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Datasheet Details

Part number SSF45N20B
Manufacturer Fairchild Semiconductor
File Size 678.63 KB
Description 200V N-Channel MOSFET
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SSF45N20B November 2001 SSF45N20B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 26.4A, 200V, RDS(on) = 0.
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