Datasheet4U Logo Datasheet4U.com

SFM9210 - Advanced Power MOSFET

Features

  • ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max. ) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ. ) SFM9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curre.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFM900 SFM900 ETC
SFM-105-L3-L-D SOCKET Samtec
SFM-110-01-L-D-A SOCKET Samtec
SFM-110-02-L-D-A SOCKET Samtec
SFM-110-02-L-D-DS SOCKET Samtec

Other Datasheets by Fairchild (onsemi)

Part Number Description
SFM9214 Advanced Power MOSFET
SFM9014 Advanced Power MOSFET
SFM9110 Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ.) SFM9210 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * 2 O 1 O 1 O 3 O o o Value -200 -0.5 -0.
Published: |