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SFM9110 - Advanced Power MOSFET

Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ. ) SFM9110 BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curr.

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Full PDF Text Transcription

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -100V n Lower RDS(ON) : 0.912 Ω (Typ.) SFM9110 BVDSS = -100 V RDS(on) = 1.2 Ω ID = -1.0 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * 2 O 1 O 1 O 3 O o o Value -100 -1.0 -0.
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