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RMWB33001 - 33 GHZ Buffer Amp

Description

The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications.

Features

  • 4 mil Substrate Small-signal Gain 24dB (typ. ) Saturated Power Out 19dBm (typ. ) Voltage Detector Included to Monitor Pout Chip size 3.2mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd.
  • Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RMWB33001 www.DataSheet4U.com June 2004 RMWB33001 33 GHz Buffer Amplifier MMIC General Description The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB33001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features • • • • • 4 mil Substrate Small-signal Gain 24dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 3.2mm x 1.
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