PN2369A
PN2369A / MMBT2369A / MMPQ2369
Discrete POWER & Signal Technologies
MMBT2369A
MMPQ2369
B E B E B
E C BE
TO-92
SOT-23
Mark: 1S
SOIC-16
NPN Switching Transistor
This device is designed for high speed saturation switching at collector currents of 10 m A to 100 m A. Sourced from Process 21.
Absolute Maximum Ratings-
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15 40 4.5 200 -55 to +150
Units
V V V m A °C
Operating and Storage Junction Temperature Range
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal...
