PN2369
MMBT2369 / PN2369
- NPN Switching Transistor
MMBT2369 / PN2369 NPN Switching Transistor
- This device is designed for high speed saturated switching at collector currents of 10m A to 100m A.
- Sourced from process 21.
February 2008
MMBT2369
B SOT-23 Mark: 1J
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
- Ta = 25×C unless otherwise noted
Symbol
Parameter
VCEO VCBO VEBO IC ICP TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
- - Collector Current (Pulse)
Operating and Storage Junction Temperature Range
- This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
- - Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Rati...
