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ISL9N327AD3ST - N-Channel Power MOSFET

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N327AD3ST February 2002 ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.023Ω (Typ), VGS = 10V • rDS(ON) = 0.033Ω (Typ), VGS = 4.5V • Qg (Typ) = 8.7nC, VGS = 5V • Qgd (Typ) =3.