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ISL9N322AD3ST - N-Channel Power MOSFET

General Description

This device employs a new advanced trench MOSFET technology and

Key Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ISL9N322AD3ST January 2002 PWM Optimized ISL9N322AD3ST N-Channel Logic Level UltraFET® Trench MOSFET 30V, 20A, 0.022Ω General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.018Ω (Typ), VGS = 10V • rDS(ON) = 0.028Ω (Typ), VGS = 4.