Datasheet Details
| Part number | IRFW730B |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 678.64 KB |
| Description | 400V N-Channel MOSFET |
| Datasheet |
 IRFW730B Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V.
- Low gate charge ( typical 25 nC).
- Low Crss ( typical 20 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Cur.
