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IRFW710B - 400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Key Features

  • 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V.
  • Low gate charge ( typical 7.7 nC).
  • Low Crss ( typical 6.0 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain C.

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Full PDF Text Transcription for IRFW710B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRFW710B. For precise diagrams, and layout, please refer to the original PDF.

IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc...

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e N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 7.7 nC) • Low Crss ( typical 6.

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