IRF624A
FEATURES
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current : 10 µA (Max.) @ VDS = 250V
- Low RDS(ON) : 0.742 Ω (Typ.)
BVDSS = 250 V RDS(on) = 1.1 Ω ID = 4.1 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR
..
Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
(2) (1) (1) (3) (1)
Value 250 4.1 2.6 16 ±30 84 4.1 4.9 4.8 49 0.39
- 55 to +150
Units V A A V m J A m J V/ns W W/°C dv/dt PD TJ , TSTG TL
°C 300
Thermal Resistance
Symbol...
