Download IRF530 Datasheet PDF
Fairchild Semiconductor
IRF530
Features - 14A, 100V - r DS(ON) = 0.160Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. IRF530 Rev. B1 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) - - - - - - VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - . . . . VDGR Continuous Drain Current TC = 100o C - . . . . . . . . . . . . . . . . . . . . ....