IRF530
DESCRIPTION
This MOSFET series realized with STMicroelectronics cunique STrip FET™ process has specifically been udesigned to minimize input capacitance and gate charge. d It is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is
Palso intended for any applications with low gate drive terequirements. le APPLICATIONS os HIGH CURRENT, HIGH SWITCHING SPEED bss SOLENOID AND RELAY DRIVERS Os REGULATOR -s DC-DC & DC-AC CONVERTERS t(s)s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, c ABS, AIR-BAG, LAMPDRIVERS, etc.) rodu ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
PVDS Drain-source Voltage (VGS = 0) te VDGR
Drain-gate Voltage (RGS = 20 kΩ) le VGS Gate- source Voltage so ID Drain Current (continuous) at TC = 25°C
Ob ID Drain Current (continuous) at TC = 100°C
2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value 100 100 ± 20 14 10
Unit V V V A A
IDM(- ) Drain Current (pulsed)
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