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IRF530 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

General Description

cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF530 N-CHANNEL 100V - 0.115 Ω - 14A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF530 100 V <0.16 Ω 14 A s TYPICAL RDS(on) = 0.115Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s LOW GATE CHARGE s HIGH CURRENT CAPABILITY 3 s 175 oC OPERATING TEMPERATURE t(s)DESCRIPTION This MOSFET series realized with STMicroelectronics cunique STripFET™ process has specifically been udesigned to minimize input capacitance and gate charge. dIt is therefore suitable as primary switch in advanced rohigh-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is Palso intended for any applications with low gate drive terequirements.