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HUFA76619D3 - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves SOURCE DRAIN GATE GATE SOURCE HUFA76619D3 HUFA76619D3S Symbol D Ordering Information G PART NUMBER HUFA76619D3 S.

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Full PDF Text Transcription

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HUFA76619D3, HUFA76619D3S Data Sheet January 2002 18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves SOURCE DRAIN GATE GATE SOURCE HUFA76619D3 HUFA76619D3S Symbol D Ordering Information G PART NUMBER HUFA76619D3 S PACKAGE TO-251AA TO-252AA BRAND 76619D 76619D HUFA76619D3S NOTE: When ordering, use the entire part number.
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