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HUF75321S3S - (HUF75321P3 / HUF75321S3S) N-Channel UltraFET Power MOSFETs

This page provides the datasheet information for the HUF75321S3S, a member of the HUF75321P3 (HUF75321P3 / HUF75321S3S) N-Channel UltraFET Power MOSFETs family.

Datasheet Summary

Features

  • 35A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75321P3 HUF75321S3S.

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Datasheet preview – HUF75321S3S

Datasheet Details

Part number HUF75321S3S
Manufacturer Fairchild Semiconductor
File Size 259.71 KB
Description (HUF75321P3 / HUF75321S3S) N-Channel UltraFET Power MOSFETs
Datasheet download datasheet HUF75321S3S Datasheet
Additional preview pages of the HUF75321S3S datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.
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