Click to expand full text
Data Sheet
HUF75329D3S
October 2013
N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products.
Formerly developmental type TA75329.
HUF75329D3S Datasheet
